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IPD50N08S4-13 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPD50N08S4-13
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPD50N08S4-13 fiche technique
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD50N08S4-13
Product Summary
VDS
RDS(on),max
ID
80 V
13.2 mW
50 A
PG-TO252-3-313
Type
IPD50N08S4-13
Package
Marking
PG-TO252-3-313 4N0813
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=25A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
50
50
200
76
31
±20
72
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30

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