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Numéro de référence | IPI80N07S4-05 | ||
Description | Power-Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Product Summary
VDS
RDS(on),max (SMD version)
ID
75 V
5.2 mW
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N07S4-05
IPI80N07S4-05
IPP80N07S4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0705
4N0705
4N0705
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=40A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
80
80
320
240
65
±20
150
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-07-14
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Pages | Pages 9 | ||
Télécharger | [ IPI80N07S4-05 ] |
No | Description détaillée | Fabricant |
IPI80N07S4-05 | Power-Transistor | Infineon |
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