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PDF IPP120N10S4-05 Data sheet ( Hoja de datos )
| Número de pieza | IPP120N10S4-05 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPP120N10S4-05 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
RDS(on),max (SMD version)
Features
ID
• N-channel - Normal Level - Enhancement mode
• AEC Q101 qualified
PG-TO263-3-2
PG-TO262-3-1
100 V
5.0 mW
120 A
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
IPB120N10S4-05
IPI120N10S4-05
IPP120N10S4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N1005
4N1005
4N1005
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
120
95
480
330
120
±20
190
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev.1.0
page 1
2014-07-01
1 page  
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
480
10 V
7V
360
6V
240
5.5 V
120 5 V
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
14
5 V 5.5 V
6V
12
10
8
6
7V
10 V
4
0
0123
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
480
2
45
0 120 240 360
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
-55 °C
25 °C
10
9
360 8
175 °C
7
240 6
480
5
120 4
3
0
3 4 5 6 72
-60 -20 20 60 100 140 180
VGS [V]
Tj [°C]
Rev.1.0
page 5
2014-07-01
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPP120N10S4-05.PDF ] | |
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