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Numéro de référence | IPB120N08S4-03 | ||
Description | Power-Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Product Summary
V DS
R DS(on),max (SMD version)
ID
80 V
2.5 mW
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N08S4-03
IPI120N08S4-03
IPP120N08S4-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0803
4N0803
4N0803
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
120
120
480
920
120
±20
278
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-20
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Pages | Pages 9 | ||
Télécharger | [ IPB120N08S4-03 ] |
No | Description détaillée | Fabricant |
IPB120N08S4-03 | Power-Transistor | Infineon |
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