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PDF IPI60R099CP Data sheet ( Hoja de datos )
| Número de pieza | IPI60R099CP | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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CoolMOSTM Power Transistor
Features
• Worldwide best R ds,on in TO220
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPI60R099CP
650 V
0.099 Ω
60 nC
PG-TO262-3-1
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies for Server and Telecon
Type
IPI60R099CP
Package
PG-TO262
Marking
6R099P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.1
page 1
Value
31
19
93
800
1.2
11
50
±20
±30
255
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2014-0528
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
50
8V 7V
10 V
20 V
6V
40 5.5 V
30
5V
20
4.5 V
10
IPI60R099CP
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
0.5
0.4 5.5 V
6V
6.5 V
0.3 5 V
7V
20 V
0.2
0.1
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=18 A; V GS=10 V
0.3
0
20 0 10 20 30 40 50
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
0.25
0.2
C °25
120
0.15
0.1
0.05
98 %
typ
80
40
C °150
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.1
page 5
20140528
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPI60R099CP.PDF ] | |
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