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IPD180N10N3G fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPD180N10N3G
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPD180N10N3G fiche technique
IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max TO-263
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD180N10N3 G
100 V
18 mW
43 A
Package
Marking
PG-TO252-3
180N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=33 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
43
30
172
50
±20
71
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2014-05-19

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