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PDF IPD110N12N3G Data sheet ( Hoja de datos )
| Número de pieza | IPD110N12N3G | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,120V
OptiMOS™3Power-Transistor
IPD_S110N12N3G
DataSheet
Rev.2.4
Final
Industrial&Multimarket
1 page  
1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
IPD110N12N3 G
IPS110N12N3 G
140
120
100
80
60
40
20
0
0 50 100
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
150
1 µs
10 µs
102
100 µs
1 ms
DC
101 10 ms
100
80
70
60
50
40
30
20
10
0
200 0 50 100 150
TC [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
100
0.5
0.2
10-1
0.1
0.05
0.02
0.01
single pulse
200
10-1
10-1
Rev. 2.4
100 101 102
VDS [V]
10-2
103
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2015-06-24
5 Page 
OptiMOS™3Power-Transistor
IPD_S110N12N3G
RevisionHistory
IPD_S110N12N3 G
Revision:2015-07-16,Rev.2.4
Previous Revision
Revision Date
2.4 2015-07-16
Subjects (major changes since last revision)
Update VGS(th) and package outline TO252-3
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
11 Rev.2.4,2015-07-16
11 Page | ||
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| PDF Descargar | [ Datasheet IPD110N12N3G.PDF ] | |
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