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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB561VM-40
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB561VM-40 fiche technique
Schottky Barrier Diode
RB561VM-40
Data Sheet
lApplication
Small current rectification
lFeatures
1) Small mold type (UMD2)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
    0.05
lLand size figure (Unit : mm)
0.9
(2)
0.3±0.05
ROHM : UMD2
JEDEC :SOD-323
JEITA : SC-90/A
0.7±0.2
    0.1
: Manufacture date
lTaping Dimensions (Unit : mm)
4.0±0.1
2.0±0.05
1.5
+0.1
-0
UMD2
(1) Cathode
lStructure
(2) Anode
0.25±0.05
1.4
+0.1
-0.05
4.0±0.1
1.0
+0.2
-0
1.5 MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
40
500
2
125
V
mA
A
°C
Storage temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF1 IF=200mA - - 0.43 V
VF2 IF=500mA - - 0.56 V
Reverse current
IR1 VR=10V - - 80 mA
IR2 VR=40V - - 300 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.10 - Rev.A

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