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Numéro de référence | RB500VM-40FH | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky Barrier Diode
RB500VM-40FH
lApplication
Small current rectification
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
0.05
Data Sheet
AEC-Q101 Qualified
lLand size figure (Unit : mm)
0.9
lFeatures
1) Ultra small mold type (UMD2)
2) High reliability
3) Low VF
(2)
0.3±0.05
0.7±0.2
0.1
UMD2
(1) Cathode
lStructure
lConstruction
Silicon epitaxial planar type
ROHM : UMD2
JEDEC :SOD-323
JEITA : SC-90/A
: Manufacture date
lTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
1.5
+0.1
-0
(2) Anode
0.25±0.05
1.4
+0.1
-0.05
4.0±0.1
1.0
+0.2
-0
1.5 MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
45 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Forward Current
Non-repetitive forward current surge peak
Io
IF
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
Glass epoxy board mounted,
direct current
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
40
100
100
1
125
V
mA
mA
A
°C
Storage temperature
Tstg
- -40 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10mA - - 0.45 V
Reverse current
IR
VR=10V
- - 1 mA
Capasitance Between Terminals
Ct
VR=10V, f=1MHz
- 6 - pF
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.10 - Rev.A
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Pages | Pages 8 | ||
Télécharger | [ RB500VM-40FH ] |
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