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Numéro de référence | R6004KNX | ||
Description | Nch 600V 4A Power MOSFET | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
R6004KNX
Nch 600V 4A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.98Ω
±4.0A
40W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-220FM
lInner circuit
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
-
500
Taping code
-
Marking
R6004KNX
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600 V
±4.0 A
±12 A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 0.8 A
Avalanche energy, single pulse
EAS*3
46 mJ
Power dissipation (Tc = 25°C)
PD 40 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150911 - Rev.001
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Pages | Pages 13 | ||
Télécharger | [ R6004KNX ] |
No | Description détaillée | Fabricant |
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