DataSheetWiki


R6004KNX fiches techniques PDF

ROHM Semiconductor - Nch 600V 4A Power MOSFET

Numéro de référence R6004KNX
Description Nch 600V 4A Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





R6004KNX fiche technique
R6004KNX
  Nch 600V 4A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.98Ω
±4.0A
40W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-220FM
 
      
lInner circuit
 
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
-
500
Taping code
-
Marking
R6004KNX
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600 V
±4.0 A
±12 A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 0.8 A
Avalanche energy, single pulse
EAS*3
46 mJ
Power dissipation (Tc = 25°C)
PD 40 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150911 - Rev.001    

PagesPages 13
Télécharger [ R6004KNX ]


Fiche technique recommandé

No Description détaillée Fabricant
R6004KND Nch 600V 4A Power MOSFET ROHM Semiconductor
ROHM Semiconductor
R6004KNJ Nch 600V 4A Power MOSFET ROHM Semiconductor
ROHM Semiconductor
R6004KNX Nch 600V 4A Power MOSFET ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche