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BFR740L3 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Infineon - NPN Silicon Germanium RF Transistor

شماره قطعه BFR740L3
شرح مفصل NPN Silicon Germanium RF Transistor
تولید کننده Infineon 
آرم Infineon 


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BFR740L3 شرح
BFR740L3
NPN Silicon Germanium RF Transistor
High gain ultra low noise RF transistor
Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.8 dB at 6 GHz
High maximum stable gain
Gms = 24 dB at 1.8 GHz
Gold metallization for extra high reliability
150 GHz fT-Silicon Germanium technology
3
12
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR740L3
Marking
Pin Configuration
R7 1=B 2=C 3=E
Package
TSLP-3-8
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
TA > 0°C
TA 0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 94°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
1TS is measured on the collector lead at the soldering point to the pcb
Value
4
3.5
13
13
1.2
30
3
160
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
1 2005-10-17

قانون اساسیصفحه 9
دانلود [ BFR740L3 دیتاشیت ]



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