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PDF BFR720L3RH Data sheet ( Hoja de datos )
| Número de pieza | BFR720L3RH | |
| Descripción | NPN Silicon Germanium RF Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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NPN Silicon Germanium RF Transistor
Target data sheet
• High gain ultra low noise RF transistor
for low current operation
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Optimum gain and noise figure
at low current operation
• Ideal for WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.8 dB at 6 GHz
• High maximum stable and available gain
Gms = 24 dB at 1.8 GHz, Gma = 16.5 dB at 6 GHz
• 150 GHz fT-Silicon Germanium technology
• Extremly small and flat leadless package
height 0.32 mm max.
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BFR720L3RH
3
12
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR720L3RH
Marking
Pin Configuration
R3
1=B
2=C
3=E
Package
TSLP-3-9
1 2008-07-04
1 page  
BFR720L3RH
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
5 2008-07-04
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BFR720L3RH.PDF ] | |
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