|
|
Numéro de référence | BFR193L3 | ||
Description | NPN Bipolar RF Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
NPN Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• fT = 8 GHz, NFmin = 1 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
BFR193L3
3
12
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR193L3
Marking
Pin Configuration
RC
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 89°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
Value
12
20
20
2
80
10
580
150
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
105
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
K/W
1 2012-08-08
|
|||
Pages | Pages 6 | ||
Télécharger | [ BFR193L3 ] |
No | Description détaillée | Fabricant |
BFR193L3 | NPN Bipolar RF Transistor | Infineon |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |