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BFR193L3 fiches techniques PDF

Infineon - NPN Bipolar RF Transistor

Numéro de référence BFR193L3
Description NPN Bipolar RF Transistor
Fabricant Infineon 
Logo Infineon 





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BFR193L3 fiche technique
NPN Bipolar RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz, NFmin = 1 dB at 900 MHz
Pb-free (RoHS compliant) package
Qualification report according to AEC-Q101 available
BFR193L3
3
12
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR193L3
Marking
Pin Configuration
RC
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 89°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
Value
12
20
20
2
80
10
580
150
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
105
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
K/W
1 2012-08-08

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