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PDF IRFD113 Data sheet ( Hoja de datos )
| Número de pieza | IRFD113 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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IRFD113, SiHFD113
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 10 V
7
2
7
Single
0.8
HVMDIP
S
G
D
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• For Automatic Insertion
• Compact Plastic Package
• End Stackable
• Fast Switching
• Low Drive Current
• Easily Paralleled
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
HVMDIP
IRFD113PbF
SiHFD113-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagea
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currentb
VGS at 10 V TC = 25 °C
ID
IDM
Linear Derating Factor
Inductive Current, Clamped
Maximum Power Dissipation
L = 100 μH
TC = 25 °C
ILM
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. TJ = 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. 1.6 mm from case.
LIMIT
60
± 20
0.8
6.4
0.008
6.4
1.0
- 55 to + 150
300c
UNIT
V
A
W/°C
A
W
°C
S11-2479-Rev. A, 19-Dec-11
1
Document Number: 91487
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
IRFD113, SiHFD113
Vishay Siliconix
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Darin Current
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 12 - Maximum Darin Current vs. Case Temperature
S11-2479-Rev. A, 19-Dec-11
5
Document Number: 91487
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFD113.PDF ] | |
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