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QY-S1010NP Datasheet دیتاشیت PDF دانلود

دیتاشیت - QYTECH - Si Photodiode

شماره قطعه QY-S1010NP
شرح مفصل Si Photodiode
تولید کننده QYTECH 
آرم QYTECH 


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QY-S1010NP شرح
Si Photodiode
For Visible to Near IR range
青岳科技
QY-S1010NP
Features
High sensitivity
High cost performance
Applications
Optical equipments
Analytical instruments
Measurements equipments
Maximum ratings (Typ. Ta=25℃)
Item
Symbol
Rating
Reverse voltage
VR 5
Chip Size
S 10*10
Operating temperature.
Topr.
-20~+80
Storage temperature.
Tstg.
-30~+120
Soldering temp. *
Tsol.
260
For MAX 5 seconds at the position of 2mm from the package
Unit
V
mm2
Electro-optical characteristics (Typ. Ta=25℃)
Item
Open circuit voltage
Short circuit current
Dark current
Terminal Capacitance
Spectral sensitivity
Peak wavelength
Symbol
VOC
ISC
Id
Ct
λ
λp
Conditions
EV=100Lx
2856K
VR= -1V
V=0V,f=10KHz
Min.
400
Typ.
0.3
55
120
20
940
Max.
1100
Unit
V
μA
nA
nF
nm
nm
http://www.qingyuetech.com
Tel:8621-51198458
QYTECH

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