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SB3020FCT fiches techniques PDF

WON-TOP ELECTRONICS - 30A DUAL SCHOTTKY BARRIER RECTIFIER

Numéro de référence SB3020FCT
Description 30A DUAL SCHOTTKY BARRIER RECTIFIER
Fabricant WON-TOP ELECTRONICS 
Logo WON-TOP ELECTRONICS 





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SB3020FCT fiche technique
®
WON-TOP ELECTRONICS
SB3020FCT – SB30100FCT
30A DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
C
G
D
B
PIN1 2
3
A
Mechanical Data
Case: ITO-220, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.9 grams (approx.)
Mounting Position: Any
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
P
I
H
E
L
J
K
ITO-220
Dim Min Max
A 14.60 15.40
B 9.70 10.30
C 2.55 2.85
D — 4.16
E 13.00 13.80
F 0.50 0.75
G 3.00 Ø 3.50 Ø
H 6.30 6.90
I 4.20 4.80
J 2.50 2.90
K 0.50 0.75
L 2.60 3.30
P 2.29 2.79
All Dimensions in mm
PIN 1
PIN 3
PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
SB SB SB SB SB SB SB SB Unit
3020FCT 3030FCT 3040FCT 3045FCT 3050FCT 3060FCT 3080FCT 30100FCT
20 30 40 45 50 60 80 100 V
RMS Reverse Voltage
VR(RMS) 14 21 28 32 35 42 56 70
V
Average Rectified Output Current Total Device
@TC = 100°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
IO
IFSM
30
15
A
200 A
Forward Voltage per diode @IF = 15A, TJ = 25°C
@IF = 15A, TJ = 125°C
VFM
0.62
0.57
0.75
0.65
0.85
0.75
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
IRM
1.0
20
mA
Typical Junction Capacitance (Note 1)
CJ
750
500 pF
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
R JA
R JC
52
4.0
°C/W
RMS Isolation Voltage, t = 1 min
VISO
1500
V
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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