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SB30100FCT fiches techniques PDF

E-DA SEMICONDUCTOR - ISOLATION SCHOTTKY BARRIER RECTIFIERS

Numéro de référence SB30100FCT
Description ISOLATION SCHOTTKY BARRIER RECTIFIERS
Fabricant E-DA SEMICONDUCTOR 
Logo E-DA SEMICONDUCTOR 





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SB30100FCT fiche technique
E-DA SEMICONDUCTOR
RoHS Compliant Product
S B 3 0 2 0 CF CT ~T S~ SBB3 0310010 C0 FTC T
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts
ITO-220AB
CURRENT
.126(3.2)
.098(2.5)
30.0 Amperes
FEATURES
  Green
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
.030(0.75)
.018(0.45)
.026(0.66)
MECHANICALDATA
Case: ITO-220AB Molded plastic
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Standard packaging: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
S YMB OL SB3020FCT SB3030FCT SB3040FCT SB3045FCT SB3050FCT SB3060FCT SB3080FCT SB30100FCT UNIT
VRRM
20
30
40
45 50 60 80 100 V
Maximum RMS Voltage
VRMS
14
21
28 31.5 35 42
56
70 V
Maximum DC Blocking Voltage
VDC 20
30
40
45 50 60 80 100 V
Maximum Average Forward Current
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IF (A V )
IF S M
Maximum Forward Voltage at 15A, per leg
VF
Maximum DC Reverse Current Tc=25 OC
at Rated DC Blocking Voltage TA=100OC
IR
Typical Thermal Resistance
RθJC
30 A
275 A
0.55 0.70 0.85 V
1.0
100
mA
1.5 OC / W
Operati ng Juncti on and Storage Temperature Range TJ ,TS TG
-50 TO + 125
OC
NOTES:
Both Bonding and Chip structure are available.
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