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NSVJ3910SB3 fiches techniques PDF

ON Semiconductor - N-Channel JFET

Numéro de référence NSVJ3910SB3
Description N-Channel JFET
Fabricant ON Semiconductor 
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NSVJ3910SB3 fiche technique
NSVJ3910SB3
Advance Information
N-Channel JFET
25V, 20 to 40mA, 40mS
Automotive JFET designed for compact and efficient designs and
including high gain performance. AEC-Q101 qualified JFET and PPAP
capable suitable for automotive applications.
Features
High Forward Transfer Admittance
High Breakdown Voltage
Low Input Capacitance
Low Noise Figure
Pb-Free and RoHS compliance
AEC-Q101 qualified and PPAP capable
Typical Applications
Low Noise Amplifier for Automotive AM Radio
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSX
25 V
Gate-to-Drain Voltage
VGDS
25 V
Gate Current
IG 10 mA
Drain Current
ID 50 mA
Allowable Power Dissipation
PD
400 mW
Operating Junction and
Storage Temperature
TJ, Tstg
55 to 150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
www.onsemi.com
ELECTRICAL CONNECTION
N-Channel
3
1 : Source
2 : Drain
3 : Gate
12
3
1
2 CPH3
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2015
December 2015 - Rev. P1
1
Publication Order Number :
NSVJ3910SB3/D

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