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Numéro de référence | NDTL1N60Z | ||
Description | N-Channel Power MOSFET / Transistor | ||
Fabricant | ON Semiconductor | ||
Logo | |||
NDDL1N60Z, NDTL1N60Z
Product Preview
N-Channel Power MOSFET
600 V, 15 W
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
CStoenatdinyuSoutasteD, rTaCin=C2u5rr°eCnt(NRoqtJeC 1)
Continuous Drain Current
Steady State, TC = 100°C
R(NqoJCte
1)
Pulsed Drain Current, tp = 10 ms
PStoewaedryDSitsastiep,aTtiCon=–2R5°qCJC
Gate−to−Source Voltage
Single Pulse Drain−to−Source
Avalanche Energy (IPK = 1.0 A)
Peak Diode Recovery (Note 2)
VDSS
ID
ID
IDM
PD
VGS
EAS
dv/dt
600
0.8 0.3
V
A
0.5 0.15 A
3.2 1.0
A
25 3 W
±30 V
60 mJ
4.5 V/ns
Source Current (Body Diode)
Lead Temperature for Soldering
Leads
IS
0.5 0.3
A
TL 260 °C
Operating Junction and Storage
Temperature
TJ, TSTG −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDDL1N60Z
Junction−to−Ambient (Note 4) NDDL1N60Z
(Note 3) NDDL1N60Z−1
(Note 4) NDTL1N60Z
(Note 5) NDTL1N60Z
RqJC
RqJA
5 °C/W
50 °C/W
96
62
151
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. P1
1
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
15 W @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
MARKING DIAGRAMS
4
Drain
12
3
4 DPAK
CASE 369C
STYLE 2
2
1 Drain 3
4
IPAK
Gate 4 Source
Drain
CASE 369D
STYLE 2
1 23
Y = Year
WW = Work Week
G = Pb−Free Package
1 23
Gate Drain Source
1 23
A
Y
W
01N60
Drain
4 SOT−223
4
CASE 318E
STYLE 3
= Assembly Location
= Year
= Work Week
= Specific Device Code
AYW
L1N60ZG
G
12 3
Gate Drain Source
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NDDL1N60Z/D
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Pages | Pages 5 | ||
Télécharger | [ NDTL1N60Z ] |
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