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Datasheet NDD60N900U1-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


NDD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NDD01N60N-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor
mosfet
2NDD01N60-1GN-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor
mosfet
3NDD01N60T4GN-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor
mosfet
4NDD02N40N-Channel Power MOSFET, Transistor

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to�
ON Semiconductor
ON Semiconductor
mosfet
5NDD02N60ZN-Channel Power MOSFET, Transistor

NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise n
ON Semiconductor
ON Semiconductor
mosfet
6NDD03N40ZN-Channel Power MOSFET, Transistor

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devices are Pb-Free, Halo
ON Semiconductor
ON Semiconductor
mosfet
7NDD03N50ZN-Channel Power MOSFET, Transistor

DataSheet.in NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS 500 V RDS(on) (MAX) @ 1.15 A 3.3 W ABSOLUTE MAXIMUM RATING
ON Semiconductor
ON Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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