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PDF EFC4630R Data sheet ( Hoja de datos )
| Número de pieza | EFC4630R | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : ENA2320
EFC4630R
Advance Information
N-Channel Power MOSFET
24V, 6A, 45mΩ, Dual EFCP
Features
• 2.5V drive
• Common-drain type
• Built-in gate protection resistor
• Halogen free compliance
• Best suited for LiB charging and discharging switch
http://onsemi.com
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm2×0.8mm)
Value
24
±12
6
60
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7064-001
1.26
43
EFC4630R-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Taping Type : TR
Marking
12
0.65
12
43
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
0.3 EFCP1313-4CC-037
This document contains information on a new product.
Specifications and information herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
TR
Electrical Connection
1
Rg
2
Rg
3
Rg=200Ω
4
FN
LOT No.
32714HK PA No.A2320-1/6
1 page  
EFC4630R
PT -- Ta
1.8 When mounted on ceramic substrate
1.6 (5000mm2×0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14722
No.A2320-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EFC4630R.PDF ] | |
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