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EFC4627R fiches techniques PDF

ON Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence EFC4627R
Description N-Channel Power MOSFET / Transistor
Fabricant ON Semiconductor 
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EFC4627R fiche technique
Ordering number : ENA2288
EFC4627R
N-Channel Power MOSFET
12V, 6A, 29.5m, Dual EFCP
http://onsemi.com
Features
2.5V drive
Protection diode in
Common-drain type
Halogen free compliance
Applications
Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
PW10μs, duty cycle1%
When mounted on ceramic substrate (5000mm2×0.8mm)
Value
12
±10
6
60
1.4
150
- 55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm2×0.8mm)
Symbol
RθJA
Value
84
Unit
°C /W
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Source to Source Breakdown Voltage
V(BR)SSS
IS=1mA, VGS=0V
Zero-Gate Voltage Source Current
ISSS
VSS=10V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±8V, VSS=0V
Gate Threshold Voltage
VGS(th)
VSS=6V, IS=1mA
Forward Transconductance
gFS VSS=6V, IS=2A
RSS(on)1
IS=2A, VGS=4.5V
Static Source to Source On-State
Resistance
RSS(on)2
RSS(on)3
RSS(on)4
IS=2A, VGS=4.0V
IS=2A, VGS=3.8V
IS=2A, VGS=3.1V
RSS(on)5
IS=2A, VGS=2.5V
Turn-ON Delay Time
td(on)
Rise Time
Turn-OFF Delay Time
tr
td(off)
VSS=6V, VGS=4.5V, IS=2A
Fall Time
tf
Total Gate Charge
Qg VSS=6V, VGS=4.5V, IS=6A
Forward Source to Source Voltage
VF(S-S)
IS=3A, VGS=0V
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 6
Test Circuit 7
Test Circuit 8
min
12
Value
typ
0.5
18.5
19.7
20.3
23.5
29.3
4.8
23.9
25.4
26.1
30.3
37.7
75
740
2340
2320
13.4
0.76
max
1
±1
1.3
29.5
31.3
32.3
39.0
50.5
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
V
Semiconductor Components Industries, LLC, 2014
January, 2014
13114 TKIM TC- 00003097 No.A2288-1/6

PagesPages 6
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