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CEU11P20 fiches techniques PDF

CET - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEU11P20
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEU11P20 fiche technique
CED11P20/CEU11P20
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-200V, -10.5A, RDS(ON) = 0.36@VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-200
±30
-10.5
-42
78
0.6
Single Pulsed Avalanche Energy e
EAS 165
Single Pulsed Avalanche Current e
IAS 10.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.6
50
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice
1
Rev 1. 2012.Mar
http://www.cetsemi.com

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