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Numéro de référence | CEU04N65 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CED04N65/CEU04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
650
±30
3.2
2
12.8
70
0.56
Single Pulsed Avalanche Energy d
EAS 220
Single Pulsed Avalanche Current d
IAS 4.2
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Oct
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEU04N65 ] |
No | Description détaillée | Fabricant |
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