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CED840A fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CED840A
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CED840A fiche technique
CED840A/CEU840A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
500V, 7.5A, RDS(ON) = 0.85@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 500
VGS ±30
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
7.5
4.7
Drain Current-Pulsed a
IDM 30
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
107
0.85
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
196
7.5
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.July
http://www.cetsemi.com

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