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دیتاشیت - NCE Power Semiconductor - N-Channel Enhancement Mode Power MOSFET

شماره قطعه NCE85H35TC
شرح مفصل N-Channel Enhancement Mode Power MOSFET
تولید کننده NCE Power Semiconductor 
آرم NCE Power Semiconductor 


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NCE85H35TC شرح
http://www.ncepower.com
Pb Free Product
NCE85H35TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H35TC uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
VDSS =85V,ID =350A
RDS(ON) < 2.4m@ VGS=10V Typ1.8 m
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
100% UIS TESTED!
100% Vds TESTED!
Marking and pin assignment
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H35TC
NCE85H35TC
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
350
247
1280
460
3.07
3500
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

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