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NCE60H12 fiches techniques PDF

NCE Power Semiconductor - N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE60H12
Description N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE60H12 fiche technique
http://www.ncepower.com
Pb Free Product
NCE60H12
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE60H12 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 60V,ID =115A
RDS(ON) < 7.0m@ VGS=10V
(Typ6.5m)
Schematic diagram
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21B
NCE75H21B
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
60
±20
115
81
400
210
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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