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PDF KF6N60F Data sheet ( Hoja de datos )
| Número de pieza | KF6N60F | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 600V, ID= 6A
RDS(ON)=1.4 (Max) @VGS =10V
Qg(typ.) =16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
SYMBOL
VDSS
VGSS
ID
RATING
KF6N60P KF6N60F
600
30
6 6*
3.8 3.8*
IDP 15
15*
EAS 180
EAR 4
dv/dt
4.5
100 41.7
PD
0.8 0.33
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.25
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.0
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
KF6N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF6N60P
KF6N60F
2011. 6. 30
Revision No : 0
1/2
1 page  
KF6N60P/F
2011. 6. 30
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF6N60F.PDF ] | |
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