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Numéro de référence | IGC99T120T6RL | ||
Description | IGBT4 Low Power Chip | ||
Fabricant | Infineon | ||
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1 Page
IGC99T120T6RL
IGBT4 Low Power Chip
FEATURES:
• 1200V Trench + Field Stop technology
• low switching losses
• positive temperature coefficient
• easy paralleling
This chip is used for:
• low / medium power modules
Applications:
• low / medium power drives
C
G
E
Chip Type
VCE ICn
Die Size
IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
10.39 x 9.5
7.987 x 8.923
1.31 x 0.811
mm 2
98.7 / 76.1
115 µm
150 mm
90 grd
140
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683C, Edition 1, 31.10.2007
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Pages | Pages 5 | ||
Télécharger | [ IGC99T120T6RL ] |
No | Description détaillée | Fabricant |
IGC99T120T6RH | IGBT4 High Power Chip | Infineon |
IGC99T120T6RL | IGBT4 Low Power Chip | Infineon |
IGC99T120T6RM | IGBT4 Medium Power Chip | Infineon |
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