DataSheetWiki


IGC99T120T6RL fiches techniques PDF

Infineon - IGBT4 Low Power Chip

Numéro de référence IGC99T120T6RL
Description IGBT4 Low Power Chip
Fabricant Infineon 
Logo Infineon 





1 Page

No Preview Available !





IGC99T120T6RL fiche technique
IGC99T120T6RL
IGBT4 Low Power Chip
FEATURES:
1200V Trench + Field Stop technology
low switching losses
positive temperature coefficient
easy paralleling
This chip is used for:
low / medium power modules
Applications:
low / medium power drives
C
G
E
Chip Type
VCE ICn
Die Size
IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
10.39 x 9.5
7.987 x 8.923
1.31 x 0.811
mm 2
98.7 / 76.1
115 µm
150 mm
90 grd
140
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683C, Edition 1, 31.10.2007

PagesPages 5
Télécharger [ IGC99T120T6RL ]


Fiche technique recommandé

No Description détaillée Fabricant
IGC99T120T6RH IGBT4 High Power Chip Infineon
Infineon
IGC99T120T6RL IGBT4 Low Power Chip Infineon
Infineon
IGC99T120T6RM IGBT4 Medium Power Chip Infineon
Infineon

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche