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IGC136T170S8RH2 fiches techniques PDF

Infineon - IGBT3 Power Chip

Numéro de référence IGC136T170S8RH2
Description IGBT3 Power Chip
Fabricant Infineon 
Logo Infineon 





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IGC136T170S8RH2 fiche technique
IGC136T170S8RH2
IGBT3 Power Chip
Features:
1700V Trench & Field stop technology
low switching losses and saturation losses
soft turn off
positive temperature coefficient
easy paralleling
Qualified according to JEDEC for target
applications
Recommended for:
power modules
Applications:
drives
C
G
E
Chip Type
VCE
ICn1 )
Die Size
Package
IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm2
sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization
Mechanical Parameters
Die size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
17.72 x 7.7
See chip drawing
1.674 x 0.899
136.4
190
200
187
Photoimide
3200 nm AlSiCu
Ni Ag system
mm2
µm
mm
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
Al, <500µm
0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7804N, L7804U, L7804F, Edition 1.1, 27.06.2014

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