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IGC109T120T6RH fiches techniques PDF

Infineon - IGBT4 High Power Chip

Numéro de référence IGC109T120T6RH
Description IGBT4 High Power Chip
Fabricant Infineon 
Logo Infineon 





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IGC109T120T6RH fiche technique
IGC109T120T6RH
IGBT4 High Power Chip
Features:
1200V Trench + Field stop technology
low VCE(sat)
soft turn off
positive temperature coefficient
easy paralleling
This chip is used for:
medium / high power modules
Applications:
medium / high power drives
C
G
E
Chip Type
VCE ICn
Die Size
IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
7.48 x 14.61
4 x (2.761 x 6.458)
0.811 x 1.31
mm 2
109.3 / 82.6
140 µm
150 mm
90 grd
126
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1, 31.10 .2007

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