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PDF 2N3440 Data sheet ( Hoja de datos )
| Número de pieza | 2N3440 | |
| Descripción | Low Power Transistor | |
| Fabricantes | ON Semiconductor | |
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 1. PDF - Vcbo=300V, NPN Transistor  Hay una vista previa y un enlace de descarga de 2N3440 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2N3440
Product Preview
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/368 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
250
Collector −Base Voltage
Emitter −Base Voltage
VCBO
VEBO
300
7.0
Collector Current − Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C
PT 800
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
PT
TJ, Tstg
5.0
−65 to
+200
Unit
Vdc
Vdc
Vdc
Adc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
175 °C/W
Thermal Resistance, Junction to Case
RqJC
30 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−39
CASE 205AB
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
2N3440
TO−39
Bulk
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. P1
1
Publication Order Number:
2N3440/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N3440.PDF ] | |
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