|
|
Numéro de référence | IRL8114PbF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Capacitance and Avalanche SOA
Lead-Free
IRL8114PbF
HEXFET® Power MOSFET
D VDSS
30V
RDS(on) typ.
3.5m
G
max
4.5m
ID (Silicon Limited)
120A
IS
D (Package Limited)
90A
Base part number
IRL8114PbF
Package Type
TO-220
GDS
TO-220AB
IRL8114PbF
G
Gate
Standard Pack
Form
Quantity
Tube
50
D
Drain
S
Source
Orderable Part Number
IRL8114PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Symbol
Parameter
RJC
RCS
Junction-to-Case
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Notes through are on page 7
Max.
120
85
90
440
115
58
0.77
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
°C
Typ.
–––
0.50
–––
Max.
1.3
–––
62
Units
°C/W
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 11, 2015
|
|||
Pages | Pages 7 | ||
Télécharger | [ IRL8114PbF ] |
No | Description détaillée | Fabricant |
IRL8114PbF | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |