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IRL8114PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRL8114PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRL8114PbF fiche technique
Application
 Optimized for UPS/Inverter Applications
 Low Voltage Power Tools
Benefits
 Low RDS(on) at 4.5V VGS
 Low Gate Charge
 Fully Characterized Capacitance and Avalanche SOA
 Lead-Free
IRL8114PbF
HEXFET® Power MOSFET
  D VDSS
30V
RDS(on) typ.
3.5m
G
max
4.5m
ID (Silicon Limited)
120A
IS
D (Package Limited)
90A
Base part number
IRL8114PbF
Package Type
TO-220
GDS
TO-220AB
IRL8114PbF
G
Gate
Standard Pack
Form
Quantity
Tube
50
D
Drain
S
Source
Orderable Part Number
IRL8114PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance  
Symbol
Parameter
RJC
RCS
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Notes through are on page 7
Max.
120
85
90
440
115
58
0.77
± 20
-55 to + 175  
300
10 lbf·in (1.1 N·m)
Units
A
 
W
W/°C
V
°C  
 
Typ.
–––
0.50
–––
Max.
1.3
–––
62
Units
°C/W  
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March 11, 2015

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