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Número de pieza | ZXMS6004DN8 | |
Descripción | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ZXMS6004DN8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! ZXMS6004DN8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET® MOSFET
Product Summary
Continuos Drain-Source Voltage: 60V
On-State Resistance: 500mΩ
Nominal Load Current (VIN = 5V): 1.3A
Clamping Energy: 120mJ
Description
The ZXMS6004DN8 is a dual self-protected low side MOSFET with
logic level input. It integrates over-temperature, overcurrent,
overvoltage (active clamp) and ESD protected logic level functionality.
The ZXMS6004DN8 is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Features and Benefits
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Mechanical Data
SO-8
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 79.1 mg (Approximate)
Top View
IN1
D1 D2
IN2
S1
Device Symbol
S2
S1
IN1
S2
IN2
Top View
Pin-Out
D1
D1
D2
D2
Ordering Information (Note 4)
Product
ZXMS6004DN8-13
Marking
6004DN8
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500 units
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Logo
Part No.
Pin 1.
6004DN8
YY WW
6004DN8 = Product name
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
Top View
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
1 of 9
www.diodes.com
August 2015
© Diodes Incorporated
1 page ZXMS6004DN8
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
Off-State Drain Current
VDS(AZ)
60
65
70
V ID = 10mA
IDSS
—
—
—
—
1
2
µA VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
Input Threshold Voltage
Input Current
VIN(th)
IIN
0.7
—
—
1 1.5
60 100
120 200
V VDS = VGS, ID = 1mA
µA VIN = +3V
VIN = +5V
Input Current while Over-Temperature Active
—
—
— 300 µA VIN = +5V
Static Drain-Source On-State Resistance
RDS(ON)
—
—
400 600 mΩ VIN = +3V, ID = 1A
350 500
VIN = +5V, ID = 1A
Continuous Drain Current (Notes 5)
Continuous Drain Current (Note 5)
0.9 —
—
VIN = 3V; TA = +25°C
1.0 —
ID 1.1 —
—
—
A VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
1.2 —
—
VIN = 5V; TA = +25°C
Current Limit (Note 8)
ID(LIM)
0.7
1
1.7
2.2
—
—
A VIN = +3V
VIN = +5V
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
td(on)
—
5
— µs
tr — 10 — µs
td(off)
—
45
—
µs VDD = 12V, ID = 0.5A, VGS = 5V
ff — 15 — µs
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)
TJT
+150
+175
—
°C
—
Thermal Hysteresis (Note 9)
ff — +10 — °C
—
Notes: 8. The drain current is restricted only when the device is in saturation (see graph ”Typical Output Characteristic”). This allows the device to be used in the
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
5 of 9
www.diodes.com
August 2015
© Diodes Incorporated
5 Page |
Páginas | Total 9 Páginas | |
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