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Número de pieza | NSS40200L | |
Descripción | PNP Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NSS40200L, NSV40200L
40 V, 2.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
www.onsemi.com
−40 VOLTS
2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 7
1
VA M G
G
1
VA = Specific Device Code*
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary
depending upon manufacturing location.
This is a representation only and actual
devices may not match this drawing exactly.
ORDERING INFORMATION
Device
Package
Shipping†
NSS40200LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
NSV40200LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS40200L/D
1 page NSS40200L, NSV40200L
TYPICAL CHARACTERISTICS
325
300
275
250
225
200
175
150
125
100
0
Cibo (pF)
1.0 2.0 3.0 4.0 5.0
VEB, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
6.0
100
90
80
70
60
50
40
30
20
0
Cobo (pF)
5.0 10 15 20 25 30
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 8. Output Capacitance
35
10
100 ms 10 ms
1 s 1 ms
1.0
0.1
0.01
0.01
Thermal Limit
0.1 1.0 10
VCE (Vdc)
Figure 9. Safe Operating Area
100
www.onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NSS40200L.PDF ] |
Número de pieza | Descripción | Fabricantes |
NSS40200L | PNP Transistor | ON Semiconductor |
NSS40200LT1G | Low VCE(sat) PNP Transistor | ON Semiconductor |
NSS40200UW6T1G | Low VCE(sat) PNP Transistor | ON Semiconductor |
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