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ON Semiconductor - Low Leakage Trench-based Schottky Rectifier

Numéro de référence NRVTSS3100E
Description Low Leakage Trench-based Schottky Rectifier
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NRVTSS3100E fiche technique
NRVTSS3100E
Low Leakage Trench-based
Schottky Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3 AMPERES
100 VOLTS
MARKING
DIAGRAM
SMB
CASE 403A
AYWW
TE31G
G
TE31
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NRVTSS3100ET3G SMB
(Pb−Free)
Shipping
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1
Publication Order Number:
NRVTSS3100E/D

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