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NCE30H10G fiches techniques PDF

NCE Power Semiconductor - N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE30H10G
Description N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE30H10G fiche technique
http://www.ncepower.com
Pb Free Product
NCE30H10G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE30H10G uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =100A
RDS(ON) <2.5 m@ VGS=10V
RDS(ON) <3.5m@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Marking and pin assignment
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
NCE30H10G
Device
NCE30H10G
Device Package
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID (100)
IDM
PD
TJ,TSTG
Limit
30
±20
100
70.7
300
65
0.43
-55 To 175
Unit
V
V
A
A
A
W
W/
Wuxi NCE Power Semiconductor Co., Ltd
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