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PDF NCE2006NE Data sheet ( Hoja de datos )
| Número de pieza | NCE2006NE | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
| Logotipo |  |
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http://www.ncepower.com
Pb Free Product
NCE2006NE
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2006NE uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Application
●PWM application
●Load switch
Marking and pin assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2006NE
NCE2006NE
SOT23-6L
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±12
7
30
1.25
-55 To 150
100
Unit
V
V
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v10
1 page  
http://www.ncepower.com
Pb Free Product
NCE2006NE
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v10
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE2006NE.PDF ] | |
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