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ON Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence BFL4001
Description N-Channel Power MOSFET / Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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BFL4001 fiche technique
Ordering number : ENA1638B
BFL4001
N-Channel Power MOSFET
900V, 6.5A, 2.7Ω, TO-220F-3FS
http://onsemi.com
Features
ON-resistance RDS(on)=2.1Ω (typ.)
10V drive
Input capacitance Ciss=850pF (typ.)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900 V
Gate-to-Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
6.5 A
4.1 A
Drain Current (Pulse)
IDP PW10μs, duty cycle1%
13 A
Allowable Power Dissipation
PD Tc=25°C (Our ideal heat dissipation condition)*3
2.0 W
37 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
223 mJ
Avalanche Current *5
IAV
6.5 A
Note :*1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6.5A
*5 L10mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
BFL4001-1E
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54 2.54
2.76
0.5 1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
FL4001
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/22912 TKIM TC-00002729/31010QB TKIM TC-00002256 No. A1638-1/7

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