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ATP213 fiches techniques PDF

ON Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence ATP213
Description N-Channel Power MOSFET / Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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ATP213 fiche technique
Ordering number : ENA1526A
ATP213
N-Channel Power MOSFET
60V, 50A, 16mΩ, Single ATPAK
http://onsemi.com
Features
Low ON-resistance
4V drive
Halogen free compliance
Large current
Slim package
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=100μH, IAV=25A
*2 L100μH, Single pulse
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
60
±20
50
150
50
150
--55 to +150
37
25
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP213-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP213
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/80509PA TK IM TC-00002021 No. A1526-1/7

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