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PDF DMT69M8LSS Data sheet ( Hoja de datos )
| Número de pieza | DMT69M8LSS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMT69M8LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
12mΩ @ VGS = 10V
14mΩ @ VGS = 4.5V
ID Max
TA = +25°C
9.8A
8.4A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) – Ensures On-State Losses Are Minimized
Excellent QGD x RDS(ON) Product (FOM)
Advanced Technology for DC-DC Converters
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Power Management Functions
DC-DC Converters
Backlighting
SO-8
S
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
D
SD
S DG
Top View
GD
Top View
Internal Schematic
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT69M8LSS-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
T6009LS
YY WW
14
85
T69M8LS
YY WW
14
= Manufacturer’s Marking
T6009LS & T69M8LS= Date Code Marking
YY or YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
DMT69M8LSS
Document number: DS38325 Rev. 2 - 2
1 of 7
www.diodes.com
December 2015
© Diodes Incorporated
1 page  
DMT69M8LSS
1
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
D=0.02
0.01 D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
RθJA(t)
RθJA =
9=8r℃(t)/W* RθJA
Duty Cycle, D = t1 / t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
DMT69M8LSS
Document number: DS38325 Rev. 2 - 2
5 of 7
www.diodes.com
December 2015
© Diodes Incorporated
5 Page | ||
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