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PDF TB100 Data sheet ( Hoja de datos )
| Número de pieza | TB100 | |
| Descripción | NPN power transistor | |
| Fabricantes | NXP Semiconductors | |
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TB100
NPN power transistor
19 December 2013
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO92) plastic package intended for use in low power SMPS emitter switching circuits.
2. Features and benefits
• Fast switching
• High base current drive capability
• High voltage capability
• Very low switching and conduction losses
3. Applications
• Emitter-switched low power SMPS circuits
• Self Oscillating Power Supplies
• AC-DC converters
• DC-AC inverters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC
collector current
DC
Ptot total power dissipation Tlead ≤ 25 °C; Fig. 1
Tj junction temperature
VCESM
collector-emitter peak VBE = 0 V
voltage
Static characteristics
hFE
DC current gain
VCE = 5 V; IC = 10 mA; Tlead = 25 °C;
Fig. 5; Fig. 6
VCE = 5 V; IC = 100 mA; Tlead = 25 °C;
Fig. 5; Fig. 6
VCE = 5 V; IC = 0.75 A; Tlead = 25 °C;
Fig. 5; Fig. 6
Min Typ Max Unit
- - 1A
- - 2W
- - 150 °C
- - 700 V
12 22 32
14 24 34
12 15.5 20
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NXP Semiconductors
TB100
NPN power transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
ICES collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tlead = 25 °C
current
VBE = 0 V; VCE = 700 V; Tj = 125 °C
IEBO
emitter-base cut-off
VEB = 9 V; IC = 0 A; Tlead = 25 °C
current
VCEsat
collector-emitter
saturation voltage
IC = 0.75 A; IB = 0.15 A; Tlead = 25 °C;
Fig. 3
VBEsat
base-emitter saturation IC = 0.75 A; IB = 0.15 A; Tlead = 25 °C;
voltage
Fig. 4
hFE
DC current gain
IC = 10 mA; VCE = 5 V; Tlead = 25 °C;
Fig. 5; Fig. 6
IC = 100 mA; VCE = 5 V; Tlead = 25 °C;
Fig. 5; Fig. 6
IC = 0.75 A; VCE = 5 V; Tlead = 25 °C;
Fig. 5; Fig. 6
Dynamic characteristics (resistive load)
ts
storage time
IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A;
tf fall time
RL = 75 Ω; VBB = -4 V; Tlead = 25 °C;
Fig. 7; Fig. 8
Min Typ Max Unit
- 0.8 100 µA
- 2 500 µA
- 0.05 100 µA
-
0.24 1
V
- 0.93 1.3 V
12 22 32
14 24 34
12 15.5 20
- 2 - µs
- 320 - ns
2.0
VCEsat
(V)
1.6
aaa-010122
1.2
0.8
IC / IB = 5
0.4
Tj = 125 °C
Tj = 25 °C
Tj = -35 °C
0
10-2
10-1
1 10
IC (A)
Fig. 3. Collector-emitter saturation voltage as a
function of collector current; typical values
VBEsa1t.6
(V)
1.4
aaa-010121
1.2 Tj = 25 °C
1.0 Tj = -35 °C
0.8
0.6 Tj = 125 °C
0.4
IC / IB = 5
0.2
0
10-2
10-1
1 10
IC (A)
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
TB100
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 December 2013
© NXP N.V. 2013. All rights reserved
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