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PDF IRG7PG42UDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PG42UDPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRG7PG42UDPbF
IRG7PG42UD-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-free package
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
C
G
E
n-channel
C
VCES = 1000V
IC = 45A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.7V @ IC = 30A
C
GCE
IRG7PG42UDPbF
TO-247AC
GC E
IRG7PG42UD-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG42UDPbF
IRG7PG42UD-EPbF
TO-247AC
TO-247AD
Tube
Tube
25 IRG7PG42UDPbF
25 IRG7PG42UD-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
1000
V
85
45
90
120 A
85
45
120
±30 V
320 W
130
-55 to +150
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
RθCS
Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.39
0.56
–––
40
Units
°C/W
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April 29, 2014
1 page  
IRG7PG42UDPbF/IRG7PG42UD-EPbF
12 120
10 100
8
ICE = 15A
6 ICE = 30A
ICE = 60A
4
80
60 TJ = 25°C
TJ = 150°C
40
2 20
0
4 8 12 16
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
7000
20
6000
5000
4000
3000
EON
2000
1000
EOFF
0
0 10 20 30 40 50 60
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
6000
0
4 6 8 10 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V
1000
tF
tdOFF
100
tR
tdON
10
0
10 20 30 40 50 60
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
10000
5000
4000
EON
1000
tdOFF
3000
EOFF
2000
1000
0
20 40 60
80 100
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
tF
100
tR
tdON
10
0
20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 29, 2014
5 Page 
IRG7PG42UDPbF/IRG7PG42UD-EPbF
Qualification Information†
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial
(per JEDEC JESD47F) ††
N/A
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier
Submit Datasheet Feedback
April 29, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRG7PG42UDPBF.PDF ] | |
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