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PDF IRG6S330UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG6S330UPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 96217A
IRG6S330UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C
TJ max
330
1.80
250
150
C
V
V
A
°C
G
E
n-channel
CE
G
D2Pak
IRG6S330UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
dRθJC Junction-to-Case
Max.
±30
70
40
250
160
63
1.3
-40 to + 150
300
Typ.
–––
Max.
0.8
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
09/11/09
1 page  
IRG6S330UPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
100 Coes
10
0
Cres
50 100 150
VCE, Collector-toEmitter-Voltage(V)
200
16
IC = 25A
14
VCES = 240V
12 VCES = 150V
10 VCES = 60V
8
6
4
2
0
0 20 40 60 80
Q G, Total Gate Charge (nC)
100
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
τJ τJ
τ1 τ1
R1R 1
CiC= iτ=i/τRi/iRi
R2R 2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.084697 0.000038
τ3τ3 0.374206 0.001255
0.341867 0.013676
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG6S330UPBF.PDF ] | |
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