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PDF IRG6IC30UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG6IC30UPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 97386
IRG6IC30UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
cVCE(ON) typ. @ IC = 25A
IRP max @ TC= 25°C
TJ max
600
1.50
250
150
C
V
V
A
°C
G
CE
G
E
n-channel
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
dRθJC Junction-to-Case
dRθJA Junction-to-Ambient
Max.
±30
25
12
250
37
15
0.30
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
3.1
65
Units
V
A
W
W/°C
°C
N
Units
°C/W
www.irf.com
1
03/31/09
1 page  
IRG6IC30UPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = C gc
Coes = Cce + Cgc
Cies
100
Coes
10
0
Cres
100 200 300 400
VCE, Collector-toEmitter-Voltage(V)
500
16
IC = 25A
14
12 VCES = 120V
VCES = 300V
10 VCES = 400V
8
6
4
2
0
0 20 40 60 80
Q G, Total Gate Charge (nC)
100
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1 0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.21623
0.41114
τi (sec)
0.000302
0.002861
τ4τ4 1.31259 0.179036
1.41309 2.673
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRG6IC30UPBF.PDF ] | |
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