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Numéro de référence | IRG6I320UPBF | ||
Description | PDP TRENCH IGBT | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PDP TRENCH IGBT
PD - 97351A
IRG6I320UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
330
VCE(ON) typ. @ IC = 24A
IRP max @ TC= 25°C
TJ max
1.45
160
150
C
V
V
A
°C
G
E
n-channel
G
Gate
C
Collector
CE
G
TO-220AB
Full-Pak
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
dRθJC Junction-to-Case
Max.
±30
24
12
160
39
16
0.31
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
Max.
3.2
Units
V
A
W
W/°C
°C
N
Units
°C/W
www.irf.com
1
03/25/09
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Pages | Pages 7 | ||
Télécharger | [ IRG6I320UPBF ] |
No | Description détaillée | Fabricant |
IRG6I320UPBF | PDP TRENCH IGBT | International Rectifier |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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