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PDF IRG4PSH71UDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4PSH71UDPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95908
IRG4PSH71UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Copack IGBT
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
C
VCES = 1200V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
G
VCE(on) typ. = 2.52V
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
E
n-channel
@VGE = 15V, IC = 50A
same footprint TO-247
• Creepage distance increased to 5.35mm
• Lead-Free
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
SUPER - 247
multiple, paralleled IGBTs
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
IF @ Tc = 100°C
IFM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
ÃPulse Collector Current
dClamped Inductive Load current
Gate-to-Emitter Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
1200
99
50
200
200
±20
70
200
350
140
-55 to +150
V
A
V
W
°C
Storage Temperature Range, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
RθJA
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Wt Weight
Min.
–––
–––
–––
–––
20 (2.0)
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.36
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
www.irf.com
1
09/20/04
1 page  
IRG4PSH71UDPbF
14000
12000
10000
8000
VGE = 0V, f = 1 MHZ
Cies = C ge + Cgc, C ce
Cres = C gc
Coes = Cce + Cgc
SHORTED
Cies
6000
4000
2000
Coes
Cres
0
1 10 100 1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
IC = 70A
16
12
8
4
0
0
100 200 300 400
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
22
VCC = 960V
VGE = 15V
TJ = 25°C
I C = 70A
20
18
1000
RG = 5.0Ω
VGE = 15V
VCC = 960V
100
IC = 140A
IC = 70A
10
IC = 35A
16
0
10 20 30
RG, Gate Resistance (Ω)
40
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page 
IRG4PSH71UDPbF
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL RECTIFIER
LOGO
ASSEMBLY LOT CODE
IRFPS37N50A
719C
17 89
Note: "P" in assembly line position
indicates "Lead-Free"
TOP
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
www.irf.com
11
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