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Numéro de référence | IRG4PC60UPBF | ||
Description | INSULATED GATE BIPOLAR TRANSISTOR | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 95568
IRG4PC60UPbF
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast Speed IGBT
Features
UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching,
>200 kHz in resonant mode.
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
Industry standard TO-247AC package.
Lead-Free
C
G
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified application conditions.
Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
VCES = 600V
VCE(on) typ. = 1.6V
@VGE = 15V, IC = 40A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
75
40
300
300
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Typ.
----
0.24
----
6 (0.21)
Max.
0.24
----
40
----
Units
°C/W
g (oz)
1
07/15/04
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Pages | Pages 9 | ||
Télécharger | [ IRG4PC60UPBF ] |
No | Description détaillée | Fabricant |
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