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IRG4PC60UPBF fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG4PC60UPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4PC60UPBF fiche technique
PD - 95568
IRG4PC60UPbF
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching,
>200 kHz in resonant mode.
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
• Lead-Free
C
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
VCES = 600V
VCE(on) typ. = 1.6V
@VGE = 15V, IC = 40A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
75
40
300
300
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
----
0.24
----
6 (0.21)
Max.
0.24
----
40
----
Units
°C/W
g (oz)
1
07/15/04

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