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Numéro de référence | IRG4IBC30SPBF | ||
Description | INSULATED GATE BIPOLAR TRANSISTOR | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 95637A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation
voltage and low operating freqencies (<1 kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-220 Full-Pak
• Lead-Free
IRG4IBC30SPbF
C
G
E
N-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• Designed to be a "drop-in" replacement for equivalent
industry -standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220 Full-Pak
Max.
600
23.5
13.0
47
47
± 20
10
45
18
-55 to + 150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Typ.
–––
–––
2.1 (0.075)
Max.
2.8
65
–––
Units
°C/W
g (oz)
1
06/17/2010
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Pages | Pages 8 | ||
Télécharger | [ IRG4IBC30SPBF ] |
No | Description détaillée | Fabricant |
IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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