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PDF IRG4IBC30KDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4IBC30KDPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -95597A
IRG4IBC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High switching speed optimized for up to 25kHz
with low VCE(on)
Short Circuit Rating 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220 FULLPAK
Lead-Free
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 9.2A
Benefits
Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
IGBT's optimized for specific application conditions
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
Designed to exceed the power handling capability of
equivalent industry-standard IGBT
Absolute Maximum Ratings
TO-220 FULLPAK
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Max.
600
17
9.2
34
34
9.2
34
10
2500
± 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Typ.
2.0 (0.07)
Max.
2.8
3.7
65
Units
V
A
µs
V
W
°C
Units
°C/W
g (oz)
1
06/11/2010
1 page  
IRG4IBC30KDPbF
1500
1200
900
VGE = 0V, f = 1MHz
CCCiroeeesss
=
=
=
CCCggceec
+
+
Cgc
Cgc
,
Cce
SHORTED
Cies
600
300
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20 VCC = 400V
I C = 16A
16
12
8
4
0
0 20 40 60 80
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.50 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
1.40 IC = 16A
1.30
1.20
1.10
1.00
0
10 20 30 40
RGRG, ,GGaattee RReesistannccee ((OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = O23hΩm
VGE = 15V
VCC = 480V
1
IC = 32A
IC = 16A
IC = 88.0AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4IBC30KDPBF.PDF ] | |
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